| 摘要 |
PURPOSE:To increase the oxygen content of a silicon single crystal and to improve the quality of the single crystal by cutting the inner surface of the quartz crucible to provide a recess, and further smoothing the peripheral edge of the recess. CONSTITUTION:The inner surface of the quartz crucible is cut to provided a recess for increasing the contact area with the molten silicon. Consequently, the oxygen content of the silicon single crystal is increased from the conventional 10<17>atoms/cc level to the 1-2X10<18>atoms/cc level close to the saturation point. The inner surface of the crucible can be cut regularly or irregularly to form the recess. The recesses can be spotted, or the filamentary recesses are arranged in parallel. In addition, the recesses can be formed over the whole inner surface of the quartz crucible, or partially formed. |
