| 摘要 |
PURPOSE:To suppress generation of smears due to intense incident light by forming an electrode by using an opaque electrode material and by covering the surface of a semiconductor substrate of one picture element with an electrode completely. CONSTITUTION:Transfer electrodes 7' and 8' transferring signal charge and metallic electrodes 2 coming in contact with a photoconductor film 3 at each semiconductor substrate 4 side are made of opaque electrode material, and the surface of the semiconductor substrate 4 of each picture element viewed from a light incidence side is covered completely with the said electrode to prevent direct light incidence to the area of the semiconductor substrate 4 where a transfer line 6 is to be formed. For this purpose, the transfer electrodes 7' and 8' are made of opaque Mo as well as the metallic electrodes 2' connected to a photoconductor film 3 at the semiconductor substrate 4 side. |
