| 摘要 |
PURPOSE:To allow the control of the pass central wavelength of the multilayered film interference filter by forming thin films having 1/4 wavelength optical thickness of semiconductors, forming thin films having the optical thickness of integer times 1/2 wavelength of quantum well structures and impressing electric fields. CONSTITUTION:GaInAsP layers 2 and InP layers 3 having the optical thickness of 1/4 wavelength are alternately and repeatedly laminated in 30 layers on an InP substrate 1 and multiple quantum well layers 4 consisting of the quantum well structures and having the optical thickness of integer times 1/2 wavelength are inserted near the approximate center thereof. The multiple quantum well layers 4 are formed by laminating, for example, prescribed GaInAsP layer of 100Angstrom and InP buffer layers of 10Angstrom layers repeatedly 14 times. An electrode 7 is provided via a GaInAsP contact layer 5 on these multilayer films and another electrode 6 is provided on the InP substrate 1 side. Thus, the pass center wavelength is controlled by impressing electric fields on this element. |
