发明名称 LINE MEMORY
摘要 PURPOSE:To enable write to be started from an arbitrary address by setting a start address on a write address generation circuit from the outside by a start address setting means. CONSTITUTION:The initial values A1-Am (m is positive integer) of write addresses are supplied from the outside to the write address generation circuit 3 consisting of a counter to which the initial value can be inputted, and also, the initial values A1-Am are inputted by supplying a load signal, the inverse of LD, and are set on the counter. Also, a write address generated at the write address generation circuit 3 is returned to '0' when an address progresses to the final address of a memory cell array 1, and hereafter, it is incremented again. Thus, since the start address can be set on the write address generation circuit 3 from the outside by the start address setting means, the write can be started from the arbitrary address.
申请公布号 JPH02186834(A) 申请公布日期 1990.07.23
申请号 JP19890006629 申请日期 1989.01.13
申请人 SHARP CORP 发明人 SUGA NOBUAKI
分类号 H03M7/30;G06F21/10;G11C11/401;H04N7/167;H04N7/169 主分类号 H03M7/30
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