发明名称 SOLID-STATE IMAGE PICKUP ELEMENT
摘要 PURPOSE:To effectively use a solid-state image pickup element in combination with another optical system, by providing a light absorbing layer with low reflection reducing a reflected light on a region opposing to the signal lines out of a surface of signal lines or the surface of a transparent layer coating an element plate. CONSTITUTION:Vanadium oxide is vacuum-deposited on the surface of an SiO2 layer 9 of a solid-stage pickup element to form a low reflection absorbing layer 10, and window is formed at a photodetection section 8 or a bonding pad section or the like with the plasma etching method. Thus, unnecessary reflected light can hardly be produced because only the photodetection section is subject to incident light on the surface of the solid-state image pickup element. Further, to a gate signal line 7 which is apt to malfunction through light irradiation, a part of an electrode 6 is deformed to protect the signal line 7 from the irradiation of light.
申请公布号 JPS5842368(A) 申请公布日期 1983.03.11
申请号 JP19810140670 申请日期 1981.09.07
申请人 FUJI SHASHIN KOKI KK;FUJI SHASHIN FILM KK 发明人 MURAKAMI TAKASHI;KAWASHIMA KAZUHARU;MATSUMOTO KENJI
分类号 H01L27/146;H01L29/78;H01L29/786;H01L31/0216;H04N5/335;H04N5/357;H04N9/07 主分类号 H01L27/146
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