| 摘要 |
PURPOSE:To achieve high productivity by supporting many electrodes on one support and making the support enter the reaction chamber and retreat from it. CONSTITUTION:Two adjacent electrodes 2 enclose a heater at the center between them, and a thermal electrode 3 is provided there. On both sides of the thermal electrode 3 substrates 4 can be mounted, and they are fixed on the side wall 5 that opposes to the side wall 1. They are insulated from the side wall 5. The side wall 5 can be removed from a reaction chamber in the direction of the arrow mark P, and mounting and removal of the substrates 4 can be conducted in the reaction chamber. The electrode 2 and the thermal electrode 3 are connected to a high frequency electric power source 8 through their common connecting conductors 6 and 7. Glow discharge develops between the electrodes 2 and 3 which keep the same distance when they are mounted on the side wall 5. By the glow discharge a reaction gas, for instance, silane gas, that is supplied from a gas inlet 9 is decomposed and an amorphours thin silicon film is formed on the substrates 4. Because of a zig-zag gas flow channel formed between the electrode 2 and substrates 4, the reaction gas contacts uniformly each of the substrates 4 and forms an uniform film. |
