| 摘要 |
PURPOSE:To execute ion-implantation directly without using an acceleration electrode or the like by a method wherein a laser light focused by a lens is applied to an ion-plantation material and the plasma of the material is produced. CONSTITUTION:A laser light 5 is focused on an implantation material 7 by a lens 6. By this process, plasma of the implantation material is produced and high speed ions are emitted from the plasma. These ions are cut out to the shape of a necessary pattern by a mask 3 and implanted in a semiconductor substrate 1 keeping the shape of the pattern accurately. This process can be realized because it is possible to make the ion source as small as it can be considered as one point. With this constitution, the processes such as coating of resist and etching which are necessary to manufacture a semiconductor integrated circuit by conventional method are all unnecessary and the pattern can be directly transferred from the mask. |
