| 摘要 |
PURPOSE:To obtain a Hall element capable of detecting a Hall voltage in a high efficiency by mounting a transistor formed to include part of an epitaxial layer of the region of a Hall voltage detector in the detector. CONSTITUTION:When a Hall current is flowed between a diffused regions 8 and 10 and a magnetic flux is simultaneously crossed vertically to the current, Hall voltages generated at the Hall voltage detectors 16, 18 are respectively produced from transistors 34, 36. In this case, since differential amplifiers are formed of the transistors 34, 36 formed in the detectors 16, 18, the Hall voltage is amplified and produced without an external circuit. According to this structure, it is not necessary to form a point contact as the conventional one, but the detection of the Hall voltage is different from the conventional point contact and becomes base impedance due to the injection of an emitter. Accordingly, the detectors 16, 18 hardly affect the influence to the Hall current distribution. Particularly, the detection of the Hall voltage due to the transistors 34, 36 become high efficiency different from the point contact. |
