| 摘要 |
PURPOSE:To shorten etching period and improve operability by using a chlorine trifluoride gas or a xenon difluoride gas as an etching gas when a silicon substrate is etched by the gas. CONSTITUTION:After a prescribed vacuum is obtained in the inside of a reaction chamber 10 consisting of quartz and substances to be etched attain a prescribed temperature, a mixed gas of ClF3 and Ar is introduced into the reaction chamber 10 by a gas supply pipe 12. An etching state is observed by monitoring a reflected light after irradiating a laser beam to the face of an etching. The substances 15 to be etched are exhibited as X-ray lithography masks 15a shown prior to completion and each mask 15a is placed on a mounting stage 14 through a supporting ring and then its mask is made to float from the surface of the mounting stage 14 so that the mask does not damage a supporting film 2a. A ring-shaped weight 21 is put on each etching mask 5a so that warps do not take place in an Si substrate 1a when etching is performed. As a result of etching, the center of the above Si substrate 1a is etched to be formed into a frame like shape. Etching period is thus shortened. |
