发明名称 |
SEMICONDUCTOR INTEGRATED CIRCUITRY |
摘要 |
The LSI uses diodes and transistors. These include an input transistor (5) coupled at its base to the input line via a Schottky barrier layer diode (7) its collector coupled to the operating voltage (14) and the base of a second transistor (3) and its emitter coupled to the base of a third transistor (6). Two further Schottky diodes (18, 1) are coupled across the collector and base and the emiter and base of a fourth transistor (4) connected as an emitter follower for the second transistor (3) and lying in series with an emitter follow transistor (2) for the first transistor (5). ADVANTAGE-Increased breakdown voltage level.
|
申请公布号 |
KR900005231(B1) |
申请公布日期 |
1990.07.21 |
申请号 |
KR19850002596 |
申请日期 |
1985.04.17 |
申请人 |
MITSUBISHI ELECTRIC CO., LTD. |
发明人 |
DAKI YOICHIRO |
分类号 |
H03K19/018;H03K17/04;H03K17/60;H03K19/003;(IPC1-7):H03K17/60 |
主分类号 |
H03K19/018 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|