发明名称 SEMICONDUCTOR INTEGRATED CIRCUITRY
摘要 The LSI uses diodes and transistors. These include an input transistor (5) coupled at its base to the input line via a Schottky barrier layer diode (7) its collector coupled to the operating voltage (14) and the base of a second transistor (3) and its emitter coupled to the base of a third transistor (6). Two further Schottky diodes (18, 1) are coupled across the collector and base and the emiter and base of a fourth transistor (4) connected as an emitter follower for the second transistor (3) and lying in series with an emitter follow transistor (2) for the first transistor (5). ADVANTAGE-Increased breakdown voltage level.
申请公布号 KR900005231(B1) 申请公布日期 1990.07.21
申请号 KR19850002596 申请日期 1985.04.17
申请人 MITSUBISHI ELECTRIC CO., LTD. 发明人 DAKI YOICHIRO
分类号 H03K19/018;H03K17/04;H03K17/60;H03K19/003;(IPC1-7):H03K17/60 主分类号 H03K19/018
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