| 摘要 |
PURPOSE:To contrive to enhance integration of a semiconductor device by a method wherein a contact hole is opened in an interlayer insulating film as to contain both the impurity region and a wiring layer formed on a substrate extending over the edge part of the impurity region being reverse conductive to the substrate interposing an insulating film between them. CONSTITUTION:The n type polycrystalline silicon wiring layer 14 doped with phosphorus is patterned on a field oxide film 12, and the wiring layer 14 is extended over the edge part of the p type diffusion resistance region 13 interposing the thin silicon oxide film 15 between them. The upper part of the n type polycrystalline silicon layer 14 is coated with the interlayer insulating film 16 consisting of an SiO2 film accumulated on the whole surface according to the CVD method. The contact hole 17 is formed in the interlayer insulating film 16 extending over the edge part of the p type diffusion resistance region 13 and the edge part of the n type polycrystalline silicon wiring layer 14. An aluminum layer 18 for connection is filled up in the contact hole 17, and the n type polycrystalline silicon wiring layer 14 and the p type diffusion resistance region 13 are connected therewith. |
