| 摘要 |
PURPOSE:To simplify a computation for the simulation of a semiconductor element by a method wherein the potential distribution of a diffusion layer of floating potential inside the semiconductor element is obtained such a manner that a relational expression between the characteristic value of a potential distribution and the quasi-Fermi potential of the diffusion layer of floating potential is solved by setting up simultaneous equitations composed of the relational expression and the Poisson equation. CONSTITUTION:A trial value phif of the quasi-Fermi potential of a diffusion layer of floating potential being given, the Poisson equation is solved, a potential PSIM of a characteristic point such as the saddle point or the quasi-saddle point of a potential distribution is obtained through the obtained potential distribution, it is judged whether the potential PSIM and the trial value phif satisfy a specified relational equation or not, and when the specified relation equation is not satisfied by them, the trial value phif is corrected and the Poisson equation is solved again, and the above procedure is repeated until they satisfy the specified relational equation. By this setup, the quasi-Fermi potential of a diffusion layer of floating potential can be easily and accurately obtained using only the Poisson equation. |
