| 摘要 |
<p>PURPOSE:To prevent cracks from occurring in a dual heterojunction layer which includes an active layer at the formation of a cleavage bar by a method wherein an insulating film is provided in stripes onto a current blocking layer, and a second conductivity type cap layer is laminated avoiding the part of the current blocking layer where the insulating is formed. CONSTITUTION:A semiconductor wafer provided with at least an n-type clad layer, an active layer 3, a p-type clad layer 4, and an n-type current blocking layer 5 all laminated on an n-type semiconductor substrate 1 is prepared, then an insulating film 6 is deposited on the current blocking layer 5 and openings 7 are selectively provided to the film 6 through a lithography process and chemical etching to turn the film 6 into the stripe-like insulating film 6, and a current injection region 8 is provided to the part of the current blocking layer 5 where the openings are formed. After the stripe-like insulating film 6 and the current injection layer 8 are formed, a p-type cap layer 9 is growth in crystal on the current blocking layer 5. As the p-type GaAs cap layer 9 is not laminated on the insulating film 6 in a crystal growth process, a semiconductor wafer provided with an isolation region 10 can be obtained.</p> |
