| 摘要 |
PURPOSE:To make high-precision alignment possible by shifting the image information of a set of aligning marks on a sensitive board to a resist layer, and performing alignment measurement using the image information shifted to the resist layer. CONSTITUTION:The optical characteristics of a resist layer RC is changed by irradiating a light beam ILa whose absorption by the resist layer RC is little to the resist layer RC, and a set of mark images WM' having specified image information of a set of wafer marks WM, that is, shape and position information are formed on the resist layer RC. Next, the amounts of the dislocation between the mark images WM' and a reticule mark RM, that is, alignment errors DELTAX and DELTAY are detected using a die-by-die alignment(DDA) system 27, 28, and a wafer W is aligned two-dimensionally. Besides, after the mark images WM' are formed on the resist layer RC, the amounts of the two-dimensional position dislocation between these mark images WM' and the wafer marks WM are measured. This makes it possible to perform the two-dimensional alignment of a board very precisely. |
