发明名称 DIPPING TREATER FOR SEMICONDUCTOR WAFER
摘要 PURPOSE:To solve the problem of the dissolution of an injurious material such as aluminum, and to eliminate the wasting of a treating liquid by installing a photosensor composed of a light emitter and a photoreceptor oppositely faced to the light emitter while interposing the treating liquid and alarming the exchange period of the treating liquid by an output from the photosensor. CONSTITUTION:A light emitter 5 and a photoreceptor 6 are opposed and installed while interposing a treating liquid 4 from the outside of a dipping vessel 1, and constitute the photosensor for detecting the turbidity of the treating liquid. An alarm 8 giving an alarm while making a detecting output from the photosensor corresponding to the exchange period of the treating liquid 4 is mounted. That is, fuming nitric acid as the treating liquid 4 changes from brown to yellow green and transparency with the increase of the number of the dipping treatment of a wafer 2, but the exchange period when the treating liquid no longer resists dipping treatment is detected by the light emitter 5 and the photoreceptor 6 as the photosensor, thus flickering the alarm lamp 8. Accordingly, the dipping treating liquid can be exchanged easily and accurately.
申请公布号 JPH02185017(A) 申请公布日期 1990.07.19
申请号 JP19890003821 申请日期 1989.01.12
申请人 MATSUSHITA ELECTRON CORP 发明人 SHIMIZU EIJI;OBATA TATSUYA
分类号 G03F7/30;H01L21/027;H01L21/30;H01L21/304 主分类号 G03F7/30
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