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发明名称
METHOD OF FORMING POLYCRYSTALLINE SILICON ONTO SEMICONDUCTOR SUBSTRATE
摘要
申请公布号
JPH02185022(A)
申请公布日期
1990.07.19
申请号
JP19890005098
申请日期
1989.01.12
申请人
HOXAN CORP
发明人
FUJITANI EISUKE
分类号
C01B33/02;H01L21/208
主分类号
C01B33/02
代理机构
代理人
主权项
地址
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