HOLE BURNING SUBSTANCE AND PRODUCTION THEREOF

摘要

PURPOSE:To obtain a hole burning substance for three-dimensional memory capable of semipermanently recording at high temperature of 2-120K and forming plural holes at one writing point by irradiating Ib type crystal diamond containing a specific amount of nitrogen with neutron rays and annealing. CONSTITUTION:Ib type single crystal and polycrystal diamond crystal having 1X10<18>-3X10<20>/cm<3> nitrogen content synthesized in a diamond stable range or in gas phase is irradiated with neutron rays (irradiation dose: 2X10<16>-2X10<19> atom/cm<3>). Then the diamond is annealed in degree of vacuum of >=1Torr at least for 1 hour at 600-1,400 deg.C to give a diamond hole burning substance. In the hole burning substance, holes formed by using a zero phonon line of N-V canter is semipermanently preserved in temperature range of 2-120K without change and plural recognizable holes are made in the zero phonon line.