发明名称 ION BEAM MACHINING METHOD
摘要 PURPOSE:To execute stable ion beam machining with high accuracy by applying a DC voltage to an electrode into which an ion beam flows in such a manner that the electrode side is anode and suppressing the generated secondary electrons, then measuring only the ion beam current flowing into the electrode. CONSTITUTION:The DC voltage is applied to the electrode 4 into which either of a part or the whole of the ion beam 10 flows in such a manner that the electrode 4 side is the anode. The secondary electrons generated from the electrode 4 are suppressed and only the ion beam current corresponding to the processing depth flowing into the electrode 4 is measured. The calculation error of the current by the secondary electrons 40 and the current of the ion beam 10 and the waste of the machining time are, therefore, eliminated and only the defective part of the ion beam 10 can be removed. Damaging of the normal parts is thus obviated. The stable ion beam machining is executed with the high accuracy in this way.
申请公布号 JPH02184854(A) 申请公布日期 1990.07.19
申请号 JP19890002762 申请日期 1989.01.11
申请人 HITACHI LTD 发明人 SAITOU HIROYA;YAMAGUCHI HIROSHI
分类号 B23K15/00;G03F1/72;G03F1/74;H01J37/30;H01J37/305;H01L21/027;H01L21/30;H01L21/302 主分类号 B23K15/00
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