SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

The method for preventing the low punch-through voltage caused by thin line pattern comprises steps: (a) injecting the P ion to increase the punch-through voltage; (b) forming a P type well region; (c) forming a nitride layer; (d) forming a well to etch the nitride layer; (e) injecting the B ion to improve the insulation; (f) forming a field oxide layer; (g) forming a gate oxide layer; (h) injecting the B ion to control the threshold voltage; (i) forming a polysilicon electrode on the oxide layer; (j) forming a drain and source region in a N channel transistor; and (h) forming a drain and source region in a P channel transistor.