INTEGRATED SEMICONDUCTOR DEVICE HAVING PHOTOELECTRIC SWITCHING ELEMENT

摘要

PURPOSE: To induce the total internal reflection of a beam within adjacent optical guides and within the optical guides on a straight line by forming the longitudinal direction of a p-n junction to the size greatly exceeding the size of an intersected region and forming the p-n junction so as to project from the intersected region symmetrically to both sides of the intersected region in the longitudinal direction. CONSTITUTION: A substrate S is formed as a semi-insulating type and the p-n junction 10 is formed of two layers C1 and C2 which are respectively (n) type and (p) type conductive. Further, these layers have edge parts BB' which respectively coincide with the bisecting longitudinal direction plane YY' of 2θangle of intersection. These edge parts are arranged in proximity to both sides of a light guide layer CG. Current limiting structures eventually have characteristics of a high degree in such a manner and these structures are arranged to be made precisely flush with the symmetrical surfaces of 2θangle of intersection. As a result, the reflection surfaces are located in the ideal optical position where the internal total reflection is induced by merely one time of reflection.