| 摘要 |
PURPOSE:To continuously form a polycrystalline silicon layer and an amorphous silicon layer by thermally annealing a first conductivity type amorphous silicon layer in a state that the surface of a second conductivity type amorphous silicon layer is cooled to form a first conductivity type amorphous silicon layer into a polycrystalline silicon layer. CONSTITUTION:After a first conductivity type amorphous silicon layer 3 and a second conductivity type amorphous silicon layer 4 are laminated, the first amorphous silicon layer is formed to be a polycrystalline silicon layer by thermally annealing or the first conductivity type amorphous silicon layer 3 is thermally annealed to form a polycrystalline silicon layer, and a second conductivity type amorphous silicon layer 4 is formed on the polycrystalline silicon layer. Accordingly, the polycrystalline silicon layer and the amorphous silicon layer can be formed in continuous steps. Further, the amorphous silicon layer is thermally annealed in a state that one surface is cooled. Thus, a polycrystalline silicon layer in which the amorphous part remains on the other side surface is provided, and a junction characteristic in the junction boundary to the laminated amorphous silicon layer to be laminated thereon is improved. |
