发明名称 |
Power transistor monolithic integrated structure |
摘要 |
A power transistor monolithic integrated structure produced by a bipolar-epitaxial technology includes a plurality of parallel connected transistor cellular structures each containing at least one component transistor. The base of each component transistor is coupled to a common base control conductor via a protective resistor and a fuse link which melts in the event of a defect in the transistor cell. Another fuse link is incorporated in the branch conductors leading from the collectors of respective component transistor to a common conductor web mounted on the surface of the transistor chip. All transistor cellular structures are electrically isolated one from each other during the manufacturing process.
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申请公布号 |
US4942308(A) |
申请公布日期 |
1990.07.17 |
申请号 |
US19890301821 |
申请日期 |
1989.01.25 |
申请人 |
ROBERT BOSCH GMBH |
发明人 |
CONZELMANN, GERHARD;NAGEL, KARL;FIEDLER, GERHARD |
分类号 |
H01L23/525 |
主分类号 |
H01L23/525 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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