发明名称 |
Method of manufacturing a mask support of sic for x-ray lithography masks |
摘要 |
A method of manufacturing a mask support or diaphragm of SiC for X-ray lithography masks is set forth in which a SiC layer is deposited by means of chemical vapor deposition (CVD) on a substrate in the form of a monocrystalline silicon wafer on at least one of the two major surfaces of the monocrystalline silicon wafer, after which the monocrystalline silicon wafer is removed except an edge region in a selective etching step. According to the invention the following processing steps are used: (a) deposition of the SiC layer with the monocrystalline silicon wafer first being heated in the apparatus provided for the deposition process to a temperature in the range of 1000 DEG to 1350 DEG C. in a H2 atmosphere and then being etched by a suitable etchant and subsequently being rinsed under the influence of H2, whereupon the SiC layer is provided from a gas atmosphere containing silicon and hydrocarbons, after which the coated substrate is cooled in a H2 atmosphere to ambient temperature, and (b) implantation of ions into the SiC layer for mechanically disturbing the crystal structure of the SiC layer.
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申请公布号 |
US4941942(A) |
申请公布日期 |
1990.07.17 |
申请号 |
US19880251630 |
申请日期 |
1988.09.29 |
申请人 |
U.S. PHILIPS CORPORATION |
发明人 |
BRUNS, ANGELIKA M.;HARMS, MARGRET;LUTHJE, HOLGER K. G.;MATTHIESSEN, BERND |
分类号 |
C01B31/36;G03F1/00;G03F1/14;G03F1/16;H01L21/027 |
主分类号 |
C01B31/36 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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