| 摘要 |
A low noise avalanche photodetector (APD) having repeated superlattice units. Where the principal ionizing carriers are electrons, each unit is formed from p+-n+ layers of a first material, a near intrinsic layer of the first material, and a near intrinsic layer of a second material having an ionization threshold which is larger than that of the first material. Such an APD can be fabricated in a GaAs/AlGaAs material system.
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