发明名称 Solid state electronic device
摘要 A solid state electronic device having a thin film of an Al (aluminum) alloy Li (lithium) on the surface of a substrate for a surface acoustic wave (SAW). Interdigital electrodes, electric wiring patterns and bonding pads are formed by the thin film of the Li-added Al alloy. This thin film suppresses migration which occurs when a high density current is supplied to the device or a large amplitude SAW is generated. The thin film, which provides a small loss and relatively low hardness, provides a desired power handling capability and high yield of wire bonding. The this film assures high endurance to failure of the device and sufficient life of the device.
申请公布号 US4942327(A) 申请公布日期 1990.07.17
申请号 US19890357464 申请日期 1989.05.26
申请人 HITACHI, LTD. 发明人 WATANABE, HITOSHI;HOSAKA, NORIO;YUHARA, AKITSUNA;YAMADA, JUN
分类号 H03H3/08;G10K11/36;H03H9/02;H03H9/145 主分类号 H03H3/08
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