发明名称 |
Solid state electronic device |
摘要 |
A solid state electronic device having a thin film of an Al (aluminum) alloy Li (lithium) on the surface of a substrate for a surface acoustic wave (SAW). Interdigital electrodes, electric wiring patterns and bonding pads are formed by the thin film of the Li-added Al alloy. This thin film suppresses migration which occurs when a high density current is supplied to the device or a large amplitude SAW is generated. The thin film, which provides a small loss and relatively low hardness, provides a desired power handling capability and high yield of wire bonding. The this film assures high endurance to failure of the device and sufficient life of the device.
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申请公布号 |
US4942327(A) |
申请公布日期 |
1990.07.17 |
申请号 |
US19890357464 |
申请日期 |
1989.05.26 |
申请人 |
HITACHI, LTD. |
发明人 |
WATANABE, HITOSHI;HOSAKA, NORIO;YUHARA, AKITSUNA;YAMADA, JUN |
分类号 |
H03H3/08;G10K11/36;H03H9/02;H03H9/145 |
主分类号 |
H03H3/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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