| 摘要 |
PURPOSE:To obtain an element isolation region by hydrolyzing raw material, the principal ingredient thereof is SiCl4, by an oxyhydrogen flame and depositing the particulates of SiO2 onto a semicondutor substrate and sintering the particulates. CONSTITUTION:SiCl4 at the rate of 100cc/min, H2 at the rate of 2,000cc/min and O2 at the rate of 3,000cc/min are forwarded to a burner, and the particulates of SiO2 are deposited onto the surface of the semiconductor substrate 1, to which grooves 2 are formed, by approximately 300mum thickness. Approximately six min is required for said process. When the whole is treated for 120min at 1,200 deg.C, transparent hard glass 5 is formed. When the back of the substrate is processed up to desired thickness, the substrate with the isolation region is completed. This method needs no thermal oxidation, and further the velocity of growth is faster only by one figure. The quantity of processing can easly be measured optically when the substrate is processed from the backs of the grooves because the transparent holder 5 is shaped after sintering. |
