| 摘要 |
PURPOSE:To completely suppress the elution of impurities from a liquid crystal cell substrate into a liquid crystal compsn. by using a specific silicon-contg. treating liquid, coating the surface of glass substrates with this liquid and subjecting the coating to a heating calcination treatment, thereby forming transparent insulating films which prevent the elution of the impurities to a liquid crystal layer. CONSTITUTION:The treating liquid prepd. by adding the element of phosphorus in the form of inorg. acid at a ratio of 1 to 10% of SiO2 to an org. soln. of silicon is used and after the surface of the glass substrates 1 are coated with this treating liquid, the coating is subjected to the heating calcination treatment. The transparent insulating films 4 which prevent the elution of the impurities to the liquid crystal layer are formed at 500 to 3,000Angstrom thickness. The org. soln. of the silicon refers to the orthoalkoxysilane the chemical formula of which is expressed generally by Si(OR)4 (R=alkyl group). The substrates for the liquid crystal panel which can completely suppress the elution of the impurities from the glass substrates 1 to the liquid crystal layer is obtd. in this way. The elution of the impurities from the liquid crystal panel substrates to the liquid crystal compsn. is thus completely suppressed. |
