| 摘要 |
PURPOSE:To enable a thin film to be grown at a relatively low temperature and to suppress contamination and a rise in temperature inside a growth chamber, by employing a discharge plasma using a gas as a source, and separating a molecular beam source and a growth chamber from each other. CONSTITUTION:A gas as a plasma source is injected into a discharge chamber 1 from a gas inlet 5. The injected gas is dissociated by glow discharge effected by a discharge electrode 4 to generate radicals. Orifices 6 and 7 provided in a transport tube 2 serve to form the radicals injected from the discharge chamber 1 into a collimated beam and radiate this beam into a growth chamber 3. In the chamber 3, the radical beam radiated from the transport tube 2 is applied to a substrate 8. In consequence, the SiH radical and hydrogen in the atomic state react with each other to precipitate Si on the substrate 8. The radical beam reaching the substrate 8 also statistically includes excited SiH and H, and the presence of the excited SiH and H permits precipitation of Si and separation of hydrogen molecule to take place at an extremely low temperature. |
