摘要 |
A dynamic random-access memory has bit-line pairs, word lines intersecting with the bit-line pairs, and memory cells arranged at the intersections of the bit-line pairs and the word lines, and sense amplifiers provided for the bit-line pairs, respectively. One of every two neighboring bit-line pairs is twisted at one portion, thus forming a twisted crossing section. The twisted crossing section is made of the parts of the gate electrodes of the transistors incorporated in the sense amplifier connected to the twisted bit-line pair. The bit-line pairs is twisted at a portion substantially middle with respect to the direction in which it extends, and the sensr amplifier associated with this bit-line pair is located at the twisted portion thereof. |
申请人 |
KABUSHIKI KAISHA TOSHIBA, KAWASAKI, KANAGAWA, JP |
发明人 |
OOWAKI, YUKIHITO, YOKOHAMA, JP;TSUCHIDA, KENJI, KAWASAKI, JP;TAKASHIMA, DAISABURO, YOKOHAMA, JP |