| 摘要 |
<p>A field effect transistor (28) having a gate voltage swing in the transistor channel (40) varying as a function of position between the drain (32) and the source (30). The gate voltage swing in the transistor channel (40) may be made to vary as a function of position by making the threshold voltage a function of position. Alternatively, a split-gate device (48) may be used by applying a voltage between the gates (70, 72). In both cases, the electric field near the source (50, 30) is raised to accelerate the electrons thereby decreasing electron transit time.</p> |
