| 摘要 |
PURPOSE:To form a Schottky junction in specified shape and area at a fixed position to a cathode contact region, and to obtain excellent diode characteristics by simultaneously forming an anode contact opening and a cathode contact opening. CONSTITUTION:A silicon oxide film is shaped onto an N-type semiconductor substrate 1a, and an anode contact opening 3a and a cathode contact 4a are formed simultaneously. Only the anode contact opening and a section near the anode contact opening are covered with a photo-resist film 5. An impurity having the same conductivity type as the N-type semiconductor substrate 1a is introduced through ion implantation 10, and a cathode contact region 6a is shaped. The photo-resist film 5 is removed, a Schottky metallic film 7a is formed onto the anode contact opening, and an anode electrode 8a and a cathode electrode 9a are shaped. Accordingly, a Schottky junction having specified shape and area can be formed at a fixed position to the cathode contact region 6a, thus acquiring excellent diode characteristics. |
