| 摘要 |
PURPOSE:To increase wiring region and to prevent the decrease in wiring freedom by providing an opening in an insulating layer which covers inner wirings comprising polycrystalline silicon, and providing a probe contact part for analysis wherein the specified part of the inner wirings are exposed. CONSTITUTION:An opening 104 having a rectangular planar shape is provided in insulating layers, i.e. a first insulating layer 106 and a second insulating layer 107 on polycrystalline silicon layers 101-1-101-3 (inner wirings) as a probe contact part for analysis. When the opening 104 is provided in the insulating layers 106 and 107 in this way and the probe contact part for the analysis is obtained, it is not necessary to include a second aluminum layer 103 in a wiring for analysis. In this way, a contact which is not necessary for circuit functions can be eliminated, the increase in wiring region in a semiconductor device having a multilayer interconnection structure can be prevented and the decrease in wiring freedom can be prevented.
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