| 摘要 |
PURPOSE:To enable oxidation and washing by an acid in a manufacturing process by forming a protective layer consisting of Si or a silicide to the surface of a high-melting point metal in a semiconductor device using the high-melting point metal as gate electrode-wiring. CONSTITUTION:An element isolation insulating film 2 is shaped to a semiconductor substrate 1 through a selective oxidation method, and a gate oxide film 3 is formed through second oxidation. An Mo film 14 is through an electron beam evaporation method, etc., an impurity is implanted in the surface of the semiconductor substrate through the gate oxide film 3 through an ion implantation method while using the gate electrode 12 shaped through normal lithography and etching processes as a mask, the whole is thermally treated, and activated, and source and drain regions 7, 11 are formed. An Si 15 layer is molded to the whole surface, the whole is thermally treated in a non-oxidizing atmosphere, and only Si of the surface of the gate electrode is changed into the metallic silicide 16. Only the Si film is removed through a dry etching method, and structure in which the protective layer 16 consisting of the silicide is shaped only to the surface of the gate electrode. |
