| 发明名称 |
Method for etching a layer of a III-V semiconductor compound. |
| 摘要 |
<p>A method for etching a layer (2) of a III-V compound semiconductor formed on a substrate (1), including the step of immersing the substrate in a liquid etchant, characterized in that the etching is conducted in the obscurity.</p> |
| 申请公布号 |
EP0377322(A1) |
申请公布日期 |
1990.07.11 |
| 申请号 |
EP19890313611 |
申请日期 |
1989.12.27 |
| 申请人 |
THE FURUKAWA ELECTRIC CO., LTD.;FUJITSU LIMITED |
发明人 |
KOGURE, KAZUO;ISHII, MASANORI |
| 分类号 |
H01L21/306 |
主分类号 |
H01L21/306 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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