| 摘要 |
PURPOSE:To reduce variations in emitting light luminance and to improve a whole light emitting intensity by forming a plurality of openings or an opening having a bent at its peripheral edge in a film formed on the surface of a first semiconductor layer. CONSTITUTION:A second semiconductor layer 19 is formed at a part of a first semiconductor layer 16. Accordingly, the thicknesses d1, d3 of the layers of the parts covered with a film 17 at the peripheral edge of the opening of the second semiconductor layer 19 are smaller than the thickness d2 of the layer of the part exposed with the opening of the first semiconductor layer 16. A driving current is made to flow between one electrode 4 formed on the first semiconductor layer 15 and the other electrode 7 formed on the second semiconductor layer 19 to allow the P-N junction of the first and second semiconductor layers 16 and 19 to emit a light. In this case, the light absorption amount of the part covered with the film 17 of the second semiconductor layer 19 can be suppressed in the amount corresponding to the reduction in the thickness of the layer to increase its luminance larger than that of the part exposed with the opening. Thus, an irregularity in the emitting light luminance can be reduced, and a whole light emitting intensity can be improved. |
