| 摘要 |
<p>PURPOSE:To relieve the position accuracy of patterning of the thin-film diode substrate for liquid crystal display in which the thin semiconductor films of respective diodes extend between a light transparent substrate and metallic wirings by forming the insulating compd. of a semiconductor material on the side faces of the thin semiconductor films in contact with the metallic wirings. CONSTITUTION:Transparent electrodes 4 are formed on the glass substrate and a (p) layer 11, an (i) layer 12, an (n) layer 13, and an Al layer 7 are successively formed by a plasma CVD method thereon. These films are then patterned by photoetching while the Al layer 7 is shifted in one way from the transparent electrodes 4. The substrate is thereafter exposed to the plasma of oxygen or nitrogen, by which the part of the a-Si film 10 near the side faces thereof is converted to the insulating film 8 consisting of the silicon oxide film or silicon nitride film. The insulating compd. 8 formed on the side faces blocks the leak current or short circuiting in the transverse direction between the metallic wirings and the lower transparent electrodes of the diodes. The generation of the leak current in the transverse direction is obviated even if light is made incident to the light transparent substrate from the rear surface thereof. The need for providing a costly exposing equipment for photolithography of the insulating film requiring the strict position accuracy is eliminated in this way.</p> |
