| 摘要 |
PURPOSE:To relax the stress to an insulating film due to a metal bump and to prevent cracks from generating in the insulating film by a method wherein a resin film is provided between the metal bump and the insulating film. CONSTITUTION:In a semiconductor device having an electrode wiring film 9 formed on a semiconductor substrate 8, an insulating film 10, which is applied on the film 9, and a metal bump 10 formed on the film 9 through an opening part 13 in the film 10, a resin film 11 of a thickness of 2mum or thicker is provided between the bump 12 and the film 10 on the peripheral part or the opening part 13 in the film 10. By this film 11, a stress to the film 10 is relaxed and cracks can be prevented from generating in the film 10. |
