| 摘要 |
PURPOSE:To obtain a semiconductor device having a better yield and reliability, which is irradiated with charged particles, by disposing an acute angle in a second conductive area in order to easily cause insulation breakdown in a second insulation layer area than in a first insulation layer area when a third conductive area is electrically charged due to the irradiation of charged particles. CONSTITUTION:This device comprises at least first conductive areas 3, 1 and second conductive areas 4a, 4b formed at different positions which are electrically insulated each other, third conductive areas 8, 9 laminated at positions of at least the first conductive areas 3, 1 and the second conductive areas 4a, 4b third insulation layer areas 8, 9 sandwiched between the first conductive areas 3, 1 and the third conductive areas 8, 9, and second insulation layer areas 6a, 6b sandwiched between the second conductive areas 4a, 4b and the third insulation layer areas 8, 9. In order to easily cause insulation breakdown in second insulation layer areas 6a, 6b than in first insulation layer areas 5, 7 when the third conductive areas 8, 9 are electrically charged due to the irradiation of charged particles, the second conductive areas 4a, 4b are formed so as to have acute angles. |
