| 摘要 |
PURPOSE:To manufacture an X-ray mask contributive to the fine-processing of super LSI device using X-ray lithography by a method wherein a protective film is formed on X-ray absorber patterns formed of a liquid. CONSTITUTION:Hg films 16 to be X-ray absorber patterns are formed of a liquid. On the other hand, grooves 15 to be super fine patterns can be easily formed in a semiconductor thin film or an insulating film normally used as an X-ray transmissive thin film 12 by reactive ion etching process with high precision. Then, in order to seal the Hg films 16 buried in the grooves 15, a SiC film 17 is deposited on the films 16 by photo CVD process to complete the X-ray mask. Through these procedures, the X-ray mask having the highly precise X-ray absorber patterns can pe manufactured so that super LSI device may be fineprocessed using X-ray lithography. |
