| 摘要 |
PURPOSE:To increase the light absorption in the I type layer part for generating high release voltage and shortcircuit current by a method wherein a wide band gap in I type layer at the interface part of a P layer and an N layer of a photoelectric conversion layer in PIN junction is set up. CONSTITUTION:The first conductive film 2, a photoelectric conversion layer 3 in PIN junction and the second conductive film 4 are laminated on a substrate 1. The layer 3 containing an I type amorphous silicon semiconductor layer 3i constitutes the PIN junction as a whole. The layers 3in, 3ip near the interface between the N type and P type fine crystalline silicon layers 3n, 3p in low level density can set up wide band gap to be made. Accordingly, the narrow bend gap can be set up in the layer 3ii at the central part of the I type layer wherein a substantial depletion layer is formed to increase the light absorption and the shortage current. |
