| 摘要 |
A semiconductor device in which, in a planar type bipolar transistor having a collector layer (22) in a substrate side, a base layer (23) formed on the collector layer (22) and an emitter island (24) formed in the base layer (23), a groove (25) is provided in the emitter island (24) to reach at least the interface between the base layer (23) and the collector layer (22) to form a conductive film (27) through a dielectric film (26) in the groove to be employed as a gate electrode of a MOS-FET thereby to implement a monolithic parallel Bi-MOS device, while the base electrode (28) of the bipolar transistor (40) and the gate electrode (29) of the MOS-FET (50) are connected with a help of diodes including a zener diode (10) thereby to implement a monolithic three-terminal parallel Bi-MOS switching device of small chip size.
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