| 摘要 |
PURPOSE:To decrease the difference in the sensing rate between sense amplifiers without enlarging the chip size by a method wherein sense amplifiers are driven by power supplying and GND wiring through the intermediary of multiple drivers while driving wirings are arranged on cell arrays. CONSTITUTION:The P channel transistor side terminals of sense amplifiers S1-Sn connected to one another are further connected to multiple P channel drivers P1-Px through the intermediary of wirings L1-Lk passing through memory cells (b). Likewise, the N channel transistor side terminals are connected to multiple N channel drivers N1-Nk. When a signal in a cell is given to a bit wire, sense signals phiSE and phiSE are displayed respectively at high and low levels so as to actuate respective drivers. At this time, the amplifiers S1-Sn are supplied with current through the wirings L1-Lk and M1-Mk so that the terminal potentials of the same amplifiers S1-Sn may be equalized by shortening the intervals between wirings. Through these procedures, the sensing rate can be equalized to make the optimum setting up of the sense amplifiers feasible. |
