| 摘要 |
<p>PURPOSE: To prevent the occurrence of a half-selection phenomenon by providing row selection lines and column selection lines with plural control lines and selecting and delivering control signals to memory cells by switching transistors. CONSTITUTION: The memory cells (1, 1) to (2, 2) are connected between the row selection lines R1 , R2 and the column selection lines C1 , C2 . If, for example, the cells (1, 1) are selected at this time, diodes D1 A to D4 A connect the plate of a ferroelectric substance 202A to control buses R1 , C1 . These diodes D1 A to D4 A are so directed as to be necessary for the signals of the selection lines R1 , C1 to access the cells (1, 1). Row drivers 121 , 122 and column drivers 181 , 182 generate necessary control signals on the selection lines R1 , C1 and the TRs Q1 A to Q4 A are switched in response therewith. Consequently, the ferroelectric memory which averts the occurrence of the half selectivity is obtd.</p> |
