| 摘要 |
PURPOSE:To obtain a multilayer interconnection which is excellent in heat resistance and has a flat surface by a method wherein an interlayer insulation film constituting a multilayer interconnection structure is made of Si resin having a specific composition. CONSTITUTION:When an insulation layer and a conductive wiring layer are laminated on a semiconductor substrate in one or multilayer into the wiring structure, the material having the following composition is used for the whole or a part of the insulation layer. That is, using the Si resin wherein the terminal of polysiloxysane expressed by the formula (H2-aRaSiO)n whose R is H3SiO, H2 CH3SiO, H(CH3)2SiO, (CH3)3SiO and mean value of (a) in a molecule is 0-1 is blocked with H3SiO, H2CH3SiO, H(CH3)2SiO or (CH3)3SiO, said resin is coat- hardened into the insulation layer. In other words, when SiOx is used by means of the Si resin made of H3SiO-(H2SiO)n-SiH3, it becomes based on the view- point that volume contraction strain is small and that a pin hole is fine. |
