| 摘要 |
PURPOSE:To obtain a current wave-form proportional to the distribution of concentration of charge carriers from electrodes formed at both end sections of a thin epitaxial layer by a method wherein the epitaxial layer is grown onto a high-resistivity semiconductor substrate, a large number of junction type intermediate electrodes are reticulately set up to the surface section of the layer, sufficient voltage is applied to one part of the electrodes, and the distribution of concentration of the charge carries in the epitaxial layer is controlled as the functions of positions. CONSTITUTION:The thin N type GaAs layer 12 is grown onto the substrate 11, which consists of GaAs and has high resistivity, in epitaxial shape, N<+> type layers 14 contacting with the substrate 11 are formed at both ends of the layer 12 through diffusion, and the electrodes 2 shaped to the layers 14 are contacted in ohmic form. The intermediate electrodes 13 consisting of reticulate P-N junctions, Schottky junctions, MIS junctions, etc. are formed to the surface of the layer 12 surrounded by the electrodes 2, sufficient voltage is applied to one part of the electrodes 13, depletion layers in the thickness direction are shaped into the layers 2, and the distribution of concentration of the charge carriers in the layers 2 is changed as the functions of the positions. Accordingly, the current wave-form proportional to the distribution of concentration is generated between the electrodes 2. |
