| 摘要 |
PURPOSE:In pulling up a grown ribbonlike Si crystal from an Si melt, to remove the extraordinary phenomena in the width direction of the ribbon shape which is liable to occur during high-speed pulling, by feeding a particulate raw material Si having smaller diameters than the width of a slot formed on a die from the top of the slot to a supply position which is examined thoroughly. CONSTITUTION:The guide pipes 11a and 11b are set above the die 4 at the both sides of the ribbonlike Si crystal 6 pulled up from the Si melt 2 through the die 4 in such a way that each of the tip openings is positioned on the slot 5 in the vicinity of the both ends of the crystal 6. The particulate raw material Si having smaller diameters than the width of the slot 5 is dropped from the feeder 12 for the raw material Si through the pipes 11a and 11b to the vicinity of the solid-liquid interface of the crystal 6 at fixed intervals by a given amount each time. Consequently, the raw material is preferably fed to the crystal growth part even at high rising speed of the melt 2 in the slot 5, and the occurrence of thinning phenomena at the both ends or one side of the crystal 6 can be prevented. |
