| 摘要 |
PURPOSE: To emit light generated inside an element efficiently without being disturbed by an electrode and enable high-output light emission by forming a current supply area at a different position from an electrode by zinc diffusion after different-kind thin-film crystal growth. CONSTITUTION: When a voltage is applied to a P type electrode 28, a current does not flow at right angles to the electrode because of a P-N-P-N juncture but flows to the area 25 through a zinc diffusion area 26 which becomes a P type through zinc diffusion, thereby forming a light emission area 30 below the area 25. The light in the element is therefore emitted out without being disturbed by the P type electrode 28. At this time, when an energy gap of a transmission layer 24 of N type gallium aluminum arsenic having served as a current barrier layer is larger than a light emitting layer 23 of P type gallium aluminum arsenic, the said transmission layer 24 of N type gallium aluminum arsenic as an N type current barrier layer transmits the internally generated light, so the emission effect of the light can be maximized. Namely, the transmission layer 24 of N type gallium aluminum arsenic serves as both the transmission layer and current barrier layer. |
