| 摘要 |
A system for making alignment marks in a semiconductor for a wafer (10) etched in alignment with and bordered by an isolation level oxide (24). A silicon wafer has a film stack of silicon dioxide and silicon nitride. A pattern of data and alignment marks are exposed on the films and the device is processed to define a pattern of alignment mark positions on the silicon substrated bordered by the isolation oxide (24). The wafer (10) is then patterned with a resist (28) covering the device region and leaving exposed the alignment mark positions. The wafer (10) is then etched to create the alignment mark pattern (trenches 32) in the wafer while the device region is protected by the resist (28). The resist (28) may then be removed and device processing continued. |
