Method of growing III-V semiconductor layers with high effective hole concentration

摘要

We have discovered that III-V semiconductor layers with previously unattainably high effective hole concentrations can be produced by molecular growth processes (e.g., MBE) if an amphoteric dopant such as Be is used and if, during the growth of the highly doped III-V layer, the substrate is maintained at a temperature Tg that is substantially lower than customarily used. For instance, a InGaAs layer with effective hole concentration 1.0 x 10<2><0> cm<-><3> was grown at Tg = 450 DEG C, and a GaAs layer with effective hole concentration of 1.0 x 10<2><0> cm<-><3> was grown at Tg of 475 DEG C. The heavily doped III-V layers can be of device grade and can usefully be part of electronic devices such as high speed bipolar transistors.