发明名称 |
Semiconductor substrate heater and reactor process and apparatus |
摘要 |
A semiconductor substrate heater process and apparatus are disclosed for uniformly heating semiconductor substrates. A device for supporting the back side of an IC wafer in a reaction chamber and for conduction heating therein and auxiliary heat directed to the front side of the substrate by reflection from the inside surface of the reaction chamber and/or by an auxiliary heating source within the reaction chamber are disclosed.
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申请公布号 |
US4938815(A) |
申请公布日期 |
1990.07.03 |
申请号 |
US19880257854 |
申请日期 |
1988.10.14 |
申请人 |
ADVANTAGE PRODUCTION TECHNOLOGY, INC. |
发明人 |
MCNEILLY, MICHAEL M. |
分类号 |
H01L21/00;H01L21/311 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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