发明名称 Semiconductor substrate heater and reactor process and apparatus
摘要 A semiconductor substrate heater process and apparatus are disclosed for uniformly heating semiconductor substrates. A device for supporting the back side of an IC wafer in a reaction chamber and for conduction heating therein and auxiliary heat directed to the front side of the substrate by reflection from the inside surface of the reaction chamber and/or by an auxiliary heating source within the reaction chamber are disclosed.
申请公布号 US4938815(A) 申请公布日期 1990.07.03
申请号 US19880257854 申请日期 1988.10.14
申请人 ADVANTAGE PRODUCTION TECHNOLOGY, INC. 发明人 MCNEILLY, MICHAEL M.
分类号 H01L21/00;H01L21/311 主分类号 H01L21/00
代理机构 代理人
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